Central Semiconductor Corp. Bipolar Transistors - BJT CMLT2207G TR

The CMLT2207G is a surface mount silicon dual complementary transistor consisting of an NPN 2N2222A and a complementary PNP 2N2907A, housed in an SOT-563 package. It is designed for general purpose amplifier and switching applications. The device has a collector-emitter voltage rating of 40 V for the NPN and 60 V for the PNP, with a continuous collector current of 600 mA and a power dissipation of 350 mW. The operating and storage junction temperature range is -65°C to +150°C, and the thermal resistance is 357°C/W. The device is halogen-free by design. Its switching characteristics include a saturation voltage of 0.3 V to 1.6 V and current gain (hFE) from 40 to 300 depending on operating conditions.