Central Semiconductor Corp. Bipolar Transistors - BJT CMLT2207

The CMLT2207 is a dual complementary transistor consisting of an isolated NPN 2N2222A and PNP 2N2907A transistor in an SOT-563 surface mount package. It is designed for general-purpose switching and amplification, with maximum collector-emitter voltages of 40 V (NPN) and 60 V (PNP), a continuous collector current of 600 mA, and a power dissipation of 350 mW. Operating and storage junction temperatures range from -65°C to +150°C. The device is halogen-free by design and meets RoHS compliance. Thermal resistance is 357°C/W. DC current gain (hFE) ranges from 40 to 300 depending on operating conditions, with transition frequency up to 300 MHz for the NPN device. All electrical characteristics are specified for TA=25°C unless noted.