Central Semiconductor Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - CMLDM8120G TR CMLDM8120G TR

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1029614-CMLDM8120G TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-563 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.56nC @ 4.5V Max Input Capacitance: 200pF @ 16V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 150 mOhm @ 950mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1029614-CMLDM8120G TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-563 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.56nC @ 4.5V Max Input Capacitance: 200pF @ 16V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 150 mOhm @ 950mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - CMLDM8120G TR - 1029614-CMLDM8120G TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CMLDM8120G TR
1029614-CMLDM8120G TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CMLDM8120G TR 1029614-CMLDM8120G TR
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1029614-CMLDM8120G TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-563 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.56nC @ 4.5V Max Input Capacitance: 200pF @ 16V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 150 mOhm @ 950mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 1029614-CMLDM8120G TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-563
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 860mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.56nC @ 4.5V
Max Input Capacitance: 200pF @ 16V
Maximum Gate-Source Voltage: 8V
Maximum Rds On at Id,Vgs: 150 mOhm @ 950mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1029614-CMLDM8120G TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - CMLDM8120G TR
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 350 milliwatts
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