Central Semiconductor Corp. MOSFET CMLDM8002AJ TR

CMLDM8002AJ TR is a surface-mount dual P-channel enhancement-mode MOSFET in the SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It features a 50 V drain-source voltage rating, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is rated at 300 mW on an FR-4 PCB with a 4.0 mm² copper pad. The device has a low threshold voltage range of 1.0 to 2.5 V, rDS(on) of 3.0 Ω at VGS=5.0 V and ID=50 mA, and is logic level compatible. It has a halogen-free design and meets the Japanese pinout configuration, with Gate of Q1 on pin 2 and Source of Q1 on pin 1. Operating and storage junction temperature ranges from -65°C to +150°C, with a thermal resistance of 357 °C/W.