Central Semiconductor Corp. MOSFET CMLDM7120G TR

Description
MOSFET N-Ch Enh Mode FET 20Vds 8.0Vgs 1.0A
Description
MOSFET N-Ch Enh Mode FET 20Vds 8.0Vgs 1.0A
Datasheet
Datasheet Summary
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The CMLDM7120G is an N-channel enhancement-mode MOSFET in an SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a maximum drain-source voltage of 20 V, a continuous drain current of 1.0 A, and a low rDS(ON) of 0.25 Ω max at VGS=1.5 V. The device features a low threshold voltage (0.5 V to 1.2 V), logic level compatibility, and ESD protection up to 2 kV. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB, 300 mW on a standard FR-4 board with a 4.0 mm² copper pad, and 150 mW on a 1.4 mm² pad. Operating and storage junction temperatures range from -65 °C to +150 °C. The device is halogen-free by design.

Datasheet Summary
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The CMLDM7120G is an N-channel enhancement-mode MOSFET in an SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a maximum drain-source voltage of 20 V, a continuous drain current of 1.0 A, and a low rDS(ON) of 0.25 Ω max at VGS=1.5 V. The device features a low threshold voltage (0.5 V to 1.2 V), logic level compatibility, and ESD protection up to 2 kV. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB, 300 mW on a standard FR-4 board with a 4.0 mm² copper pad, and 150 mW on a 1.4 mm² pad. Operating and storage junction temperatures range from -65 °C to +150 °C. The device is halogen-free by design.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 20Vds 8.0Vgs 1.0A

MOSFET N-Ch Enh Mode FET 20Vds 8.0Vgs 1.0A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMLDM7120G TR
Product Name MOSFET
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