Central Semiconductor Corp. MOSFET CMLDM7002A

Description
MOSFET Dual N-Channel Enh Mode
Description
MOSFET Dual N-Channel Enh Mode
Datasheet
Datasheet Summary
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CMLDM7002A is a dual N-channel enhancement-mode MOSFET in an SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB with a 4.0 mm² copper pad. The device exhibits a drain-source on-resistance of 2.0 Ω at VGS=10 V and ID=500 mA, and a threshold voltage between 1.0 V and 2.5 V. Operating and storage junction temperatures range from -65 °C to +150 °C. The SOT-563 package has a 6-pin configuration with USA pinout. The device is rated for RoHS compliance and operates with low rDS(ON) and VDS(ON).

Datasheet Summary
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CMLDM7002A is a dual N-channel enhancement-mode MOSFET in an SOT-563 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is rated at 350 mW on a ceramic or aluminum core PCB with a 4.0 mm² copper pad. The device exhibits a drain-source on-resistance of 2.0 Ω at VGS=10 V and ID=500 mA, and a threshold voltage between 1.0 V and 2.5 V. Operating and storage junction temperatures range from -65 °C to +150 °C. The SOT-563 package has a 6-pin configuration with USA pinout. The device is rated for RoHS compliance and operates with low rDS(ON) and VDS(ON).

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Sheung Wan, Hong Kong
MOSFET Dual N-Channel Enh Mode

MOSFET Dual N-Channel Enh Mode

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMLDM7002A
Product Name MOSFET
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