Central Semiconductor Corp. MOSFET CMLDM3757 TR

The CMLDM3757 is a complementary N-channel and P-channel enhancement-mode MOSFET pair in a SOT-563 surface-mount package, designed for high-speed pulsed amplifier and driver applications in battery-powered portable devices. It features a maximum drain-source voltage of 20 V, continuous drain currents of 540 mA (N-channel) and 430 mA (P-channel), and a power dissipation of 350 mW on a ceramic or aluminum core PCB. The devices have low threshold voltages (0.45-1.0 V) and low on-resistance (0.35-0.9 Ω at 4.5 V gate drive). ESD protection is rated up to 1800 V (Human Body Model). The SOT-563 package has a pin configuration of source-Q1, gate-Q1, drain-Q2, source-Q2, gate-Q2, drain-Q1. Operating and storage junction temperatures range from -65°C to +150°C. The part meets RoHS compliance and is marked with code 3C7.