Central Semiconductor Corp. MOSFET CMLDM3737 TR

The CMLDM3737 is a dual N-channel enhancement-mode MOSFET in a SOT-563 surface mount package, designed for high-speed pulsed amplifier and driver applications. Each transistor has a drain-source voltage rating of 20 V, a continuous drain current of 540 mA, and a maximum power dissipation of 350 mW on a ceramic or aluminum core PCB. It features a low threshold voltage range of 0.45 to 1.0 V and a typical rDS(ON) of 0.55 Ω at 4.5 V gate bias. The device includes ESD protection up to 2 kV and operates within a junction temperature range of -65 to +150 °C. The pin configuration is defined with dual source, gate, and drain terminals. The part meets RoHS compliance and is available in Pb-free and tin/lead plating options.