Central Semiconductor Corp. Bipolar Transistors - BJT CMKT5078 TR

The CMKT5078 is a dual silicon transistor in an SOT-363 ULTRAmini package, containing one NPN and one PNP complementary transistor for applications requiring high gain and low noise. It has a maximum collector-base voltage of 35 V for the NPN and 50 V for the PNP, a collector-emitter voltage of 30 V for the NPN and 50 V for the PNP, and a continuous collector current rating of 50 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The operating and storage junction temperature range is -65 to +150 °C. Current gain (hFE) ranges from 250 to 900 depending on bias conditions. The SOT-363 package has six pins with specific emitter, base, and collector assignments for each transistor.