Central Semiconductor Corp. Bipolar Transistors - BJT CMKT3904 TR

Description
Bipolar Transistors - BJT Dual - NPN/NPN Switching
Description
Bipolar Transistors - BJT Dual - NPN/NPN Switching
Datasheet
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Dual NPN general purpose switching transistors in an SOT-363 package, with a maximum collector-emitter voltage of 40 V, continuous collector current of 200 mA, and power dissipation of 350 mW. Operating junction temperature ranges from -65°C to +150°C, with thermal resistance of 357°C/W. Features include hFE ranging from 30 to 300 depending on collector current, saturation voltages up to 0.30 V at 50 mA, and transition frequency of 300 MHz. Pin configuration assigns emitters, bases, and collectors across six leads with Q1 collector on pin 6 and Q2 collector on pin 3.

Datasheet Summary
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Dual NPN general purpose switching transistors in an SOT-363 package, with a maximum collector-emitter voltage of 40 V, continuous collector current of 200 mA, and power dissipation of 350 mW. Operating junction temperature ranges from -65°C to +150°C, with thermal resistance of 357°C/W. Features include hFE ranging from 30 to 300 depending on collector current, saturation voltages up to 0.30 V at 50 mA, and transition frequency of 300 MHz. Pin configuration assigns emitters, bases, and collectors across six leads with Q1 collector on pin 6 and Q2 collector on pin 3.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMKT3904 TR
Bipolar Transistors - BJT CMKT3904 TR
Bipolar Transistors - BJT Dual - NPN/NPN Switching

Bipolar Transistors - BJT Dual - NPN/NPN Switching

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMKT3904 TR
Product Name Bipolar Transistors - BJT
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