Central Semiconductor Corp. Bipolar Transistors - BJT CMKT2907A

The CMKT2907A is a dual PNP silicon transistor in an SOT-363 surface mount package, designed for general purpose and switching applications. Each transistor has a collector-base voltage rating of 60 V, collector-emitter voltage of 60 V, and continuous collector current of 600 mA, with a power dissipation of 350 mW. The operating and storage junction temperature ranges from -65 to +150 °C. The thermal resistance is 357 °C/W. Electrical characteristics include a current gain (hFE) of 100 to 300 at IC=150 mA and VCE=10 V, collector-emitter saturation voltage of 0.4 V at IC=150 mA and IB=15 mA, and transition frequency of 200 MHz. The device is housed in a 6-lead SOT-363 package with dimensions compliant to standard SOT-363 mechanical outlines.