Central Semiconductor Corp. Bipolar Transistors - BJT CMBT3906E TR

CMBT3906E is a PNP silicon transistor designed for general-purpose applications requiring small size and low power dissipation. It is packaged in the FEMTOmini™ SOT-923 case measuring 0.8 x 0.6 x 0.4 mm. The device has a continuous collector current rating of 200 mA, a collector-emitter voltage of 40 V, and a power dissipation of 100 mW. It features a typical collector-emitter saturation voltage of 0.1 V at 50 mA and a DC current gain (hFE) ranging from 70 to 300 depending on collector current. The operating and storage junction temperature range is -65°C to +150°C, with a thermal resistance of 1250°C/W. The part includes enhanced specifications for performance in space-constrained applications such as battery-powered devices.