Central Semiconductor Corp. Bipolar Transistors - BJT CM4209

The CENTRAL SEMICONDUCTOR CM4209 is a PNP silicon transistor designed for high-speed switching applications in a TO-18 package. It has a collector-base voltage rating of 15 V, collector-emitter voltage of 15 V, and continuous collector current of 200 mA. Power dissipation is 500 mW at TA=25°C, with a thermal resistance of 350 °C/W. The transistor exhibits saturated collector-emitter voltage as low as 0.15 V at IC=1 mA and IB=100 µA, with DC current gain (hFE) ranging from 35 to 120 depending on bias conditions. Transition frequency is 850 MHz at 10 mA and 100 MHz. Storage and operating junction temperatures range from -65 °C to +200 °C.