Central Semiconductor Corp. Bipolar Transistors - BJT CJD47 TR13

The CJD47 is a surface mount NPN silicon power transistor in a DPAK package, designed for high-voltage switching applications such as power supplies. It has a collector-base voltage rating of 350 V, a collector-emitter voltage rating of 250 V, and a continuous collector current of 1.0 A. The device dissipates up to 15 W at TC=25°C and 1.56 W at TA=25°C, with a thermal resistance from junction to case of 8.33 °C/W. The operating and storage junction temperature range is -65 to +150 °C. The current gain (hFE) is 30 to 150 at IC=300 mA and VCE=10 V, and 10 at IC=1.0 A. The collector-emitter saturation voltage is 1.0 V at IC=1.0 A and IB=200 mA, and the base-emitter on-voltage is 1.5 V at IC=1.0 A and VCE=10 V.