Central Semiconductor Corp. Bipolar Transistors - BJT CJD45H11 TR13

The CJD45H11 is a PNP silicon power transistor in a DPAK surface mount package for switching and power amplifier applications. It has a collector-emitter voltage rating of 80 V, continuous collector current of 8.0 A, and peak collector current of 16 A. Power dissipation is 20 W at TC=25°C and 1.75 W at TA=25°C. Junction temperature ranges from -65°C to +150°C. Thermal resistance is 6.25°C/W from junction to case and 71.4°C/W from junction to ambient. Saturation voltage is 1.5 V at IC=8.0 A and IB=800 mA. Current gain is 40 at IC=4.0 A and VCE=1.0 V. Transition frequency is 50 MHz at IC=500 mA and VCE=10 V. The DPAK package has four terminals: base, collector, emitter, and collector.