Central Semiconductor Corp. Bipolar Transistors - BJT CJD44H11 TR13

The CJD44H11 is an NPN silicon power transistor in a DPAK surface mount package, designed for switching and power amplifier applications. It has a collector-emitter voltage rating of 80 V, continuous collector current of 8.0 A, and power dissipation of 20 W at TC=25°C or 1.75 W at TA=25°C. The thermal resistance from junction to case is 6.25°C/W. Electrical characteristics include a VCE(sat) of 1.0 V at IC=8.0 A and IB=400 mA, and a DC current gain (hFE) of 60 at VCE=1.0 V and IC=2.0 A. The transition frequency is 60 MHz at VCE=10 V and IC=500 mA. Operating and storage junction temperatures range from -65°C to +150°C.