Central Semiconductor Corp. Bipolar Transistors - BJT CJD350 TR13

The CJD350 is a PNP silicon power transistor in a DPAK surface mount package, designed for high-voltage general purpose applications. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, and a continuous collector current of 500 mA. Power dissipation is 15 W at TC=25°C and 1.56 W at TA=25°C. Thermal resistance is 8.33 °C/W from junction to case and 80.1 °C/W from junction to ambient. The operating and storage junction temperature range is -65 to +150 °C. The device exhibits a VCE(sat) of 2.6 V at IC=100 mA and IB=10 mA, and a VBE(on) of 2.0 V at IC=1.0 A. Current gain (hFE) ranges from 30 to 240 at IC=50 mA. The TR13 suffix indicates reel packaging.