Central Semiconductor Corp. Bipolar Transistors - BJT CJD340 TR13

The CJD340 is an NPN silicon power transistor in a DPAK surface mount package, designed for high-voltage general-purpose applications. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, and a continuous collector current of 500 mA. The device dissipates up to 15 W of power and operates with a junction temperature range of -65 to +150 °C. Thermal resistance from junction to case is 8.33 °C/W, and from junction to ambient is 80.1 °C/W. The current gain (hFE) ranges from 30 to 240 at 50 mA collector current, with a transition frequency of 10 MHz. The collector-emitter saturation voltage is 1.0 V at 100 mA collector current and 10 mA base current.