Central Semiconductor Corp. Bipolar Transistors - BJT CJD32CBK

The CJD32C is a PNP silicon power transistor in a DPAK surface mount package, designed for power amplifier and high-speed switching applications. It has a collector-emitter voltage rating of 100 V, continuous collector current of 3.0 A, and power dissipation of 15 W at TC=25°C. The device has a thermal resistance of 8.33 °C/W from junction to case and operates from -65 to +150 °C. Electrical characteristics include a collector-emitter saturation voltage of 1.2 V at IC=3.0 A and IB=375 mA, and a current gain (hFE) of 10 to 50 at IC=3.0 A. The package has four leads: base, collector, emitter, and collector.