The CJD31C is an NPN silicon power transistor in a DPAK surface mount package, designed for power amplifier and high-speed switching applications. It has a collector-base voltage rating of 100 V, collector-emitter voltage of 100 V, and continuous collector current of 3.0 A. Power dissipation is rated at 15 W with a junction temperature range of -65 to +150 °C. Thermal resistance is 8.33 °C/W from junction to case. The device meets standard semiconductor reliability requirements and is RoHS compliant.
Bipolar Transistors - BJT Comp PWR Trans 100Vcbo 100Vceo 15W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CJD31C TR13 |
| Product Name | Bipolar Transistors - BJT |
