Central Semiconductor Corp. Bipolar Transistors - BJT CJD210 TR13

The CJD210 is a PNP silicon power transistor in a DPAK surface mount package, designed for high current amplifier applications. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 5.0 A, and a power dissipation of 12.5 W at TC=25°C. The device features a thermal resistance of 10 °C/W (junction-to-case) and operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a saturation voltage of 1.8 V at IC=5.0A and IB=1.0A, and a current gain (hFE) of 10 to 180 depending on operating conditions. The part meets standard silicon transistor performance criteria for power applications.