Central Semiconductor Corp. Bipolar Transistors - BJT CJD200 BK

The CJD200 is an NPN silicon power transistor in a DPAK package, rated for a continuous collector current of 5.0 A, a collector-emitter voltage of 25 V, and a power dissipation of 12.5 W at TC=25°C. It has a thermal resistance of 10 °C/W from junction to case and operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a collector-emitter saturation voltage of 1.8 V at IC=5.0 A and IB=1.0 A, and a current gain (hFE) of 10 to 180 depending on operating conditions. The device is designed for high current amplifier applications.