Central Semiconductor Corp. Bipolar Transistors - BJT CJD13003 TR13

The CJD13003 is a silicon NPN power transistor in a DPAK surface mount package, designed for high-voltage, high-speed switching in inductive applications. It has a collector-emitter voltage rating of 400 V, a continuous collector current of 1.5 A, and a power dissipation of 15 W at TC=25°C. The device features a junction temperature range of -65 to +150°C, thermal resistance from junction to case of 8.33°C/W, and a switch time of 0.1 μs delay, 1.0 μs rise, 4.0 μs storage, and 0.7 μs fall under specified conditions. It meets the electrical characteristics for hFE, VCE(sat), and VBE(sat) under specified test conditions and is marked with the full part number. The package is a 3-lead DPAK with dual collector terminals.