Central Semiconductor Corp. Darlington Transistors CJD122 BK

The CJD122 is an NPN silicon power Darlington transistor in a DPAK surface mount package, designed for low-speed switching and amplifier applications. It has a collector-emitter voltage rating of 100 V and a continuous collector current of 8.0 A. Power dissipation is 20 W with TC=25°C and 1.75 W with TA=25°C. Thermal resistance from junction to case is 6.25 °C/W and from junction to ambient is 71.4 °C/W. Operating and storage junction temperatures range from -65 to +150 °C. The current gain (hFE) is 1000 to 12000 at IC=4.0 A and VCE=4.0 V. Collector-emitter saturation voltage is 2.0 V at IC=4.0 A and IB=16 mA. The base-emitter saturation voltage is 4.5 V at IC=8.0 A and IB=80 mA. The collector-base capacitance is 200 pF at VCB=10 V and f=1.0 MHz. The package has four pins: base, collector, emitter, and collector.