Central Semiconductor Corp. Darlington Transistors CJD112 TR13

The CJD112 is an NPN silicon power Darlington transistor in a DPAK surface mount package, designed for low-speed switching and amplifier applications. It has a collector-base voltage rating of 100 V, a collector-emitter voltage rating of 100 V, and a continuous collector current of 2.0 A. Power dissipation is 20 W at TC=25°C and 1.75 W at TA=25°C. The thermal resistance from junction to case is 6.25 °C/W and from junction to ambient is 71.4 °C/W. The transistor has a minimum DC current gain of 500 at IC=0.5 A and up to 12,000 at IC=2.0 A, with a saturated collector-emitter voltage of 2.0 V at IC=2.0 A and IB=8.0 mA. The operating and storage junction temperature range is -65 to +150 °C.