Central Semiconductor Corp. Bipolar Transistors - BJT CEN-U57

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Bipolar Transistors - BJT PNP Power
Description
Bipolar Transistors - BJT PNP Power
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The CEN-U57 is a PNP silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The thermal resistance from junction to case is 12.5 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. Electrical characteristics include a collector-emitter saturation voltage of 0.35 V at IC=250mA and IB=25mA, and a current gain (hFE) of 20 at IC=500mA and VCE=1.0V. The transition frequency is 50 MHz at IC=200mA.

Datasheet Summary
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The CEN-U57 is a PNP silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has a collector-emitter voltage rating of 100 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The thermal resistance from junction to case is 12.5 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. Electrical characteristics include a collector-emitter saturation voltage of 0.35 V at IC=250mA and IB=25mA, and a current gain (hFE) of 20 at IC=500mA and VCE=1.0V. The transition frequency is 50 MHz at IC=200mA.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CEN-U57
Bipolar Transistors - BJT CEN-U57
Bipolar Transistors - BJT PNP Power

Bipolar Transistors - BJT PNP Power

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CEN-U57
Product Name Bipolar Transistors - BJT
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