Central Semiconductor Corp. Bipolar Transistors - BJT CEN-U10

The CEN-U10 is an NPN silicon power transistor designed for high voltage amplifier applications, housed in a TO-202 case with a tab common to the collector. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, a continuous collector current of 0.5 A, and a power dissipation of 1.75 W at 25°C ambient temperature. The device meets an operating and storage junction temperature range of -65 to +150°C, with a thermal resistance from junction to case of 12.5°C/W. Electrical characteristics include a minimum DC current gain of 25 at 1 mA collector current, a saturated collector-emitter voltage of 1.5 V at 20 mA collector current, and a transition frequency of 45 MHz.