Central Semiconductor Corp. Bipolar Transistors - BJT CEN-U07

Description
Bipolar Transistors - BJT NPN Pwr Trans
Description
Bipolar Transistors - BJT NPN Pwr Trans
Datasheet
Datasheet Summary
Powered by GS/AI

The CEN-U07 is an NPN silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has aCollector-Emitter voltage rating of 100 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The device exhibits a collector-emitter saturation voltage of 0.5 V at IC=250 mA and IB=10 mA, and a DC current gain (hFE) of 50 at IC=250 mA and VCE=1.0 V. The thermal resistance from junction to case is 12.5 °C/W, and the operational temperature range is -65 to +150 °C.

Datasheet Summary
Powered by GS/AI

The CEN-U07 is an NPN silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has aCollector-Emitter voltage rating of 100 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The device exhibits a collector-emitter saturation voltage of 0.5 V at IC=250 mA and IB=10 mA, and a DC current gain (hFE) of 50 at IC=250 mA and VCE=1.0 V. The thermal resistance from junction to case is 12.5 °C/W, and the operational temperature range is -65 to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CEN-U07
Bipolar Transistors - BJT CEN-U07
Bipolar Transistors - BJT NPN Pwr Trans

Bipolar Transistors - BJT NPN Pwr Trans

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CEN-U07
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data