Central Semiconductor Corp. Bipolar Transistors - BJT CEN-U06

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Bipolar Transistors - BJT 80Vbo 80Vceo 4.0Vebo 2.0A 10W
Description
Bipolar Transistors - BJT 80Vbo 80Vceo 4.0Vebo 2.0A 10W
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The CEN-U06 is an NPN silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has a collector-emitter voltage rating of 80 V, a collector-base voltage rating of 80 V, an emitter-base voltage rating of 4.0 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The device operates with a junction temperature range of -65 to +150°C, has a thermal resistance of 12.5 °C/W from junction to case, and a collector-emitter saturation voltage of 0.35 V at IC=250mA and IB=25mA. It meets the electrical equivalence of National Semiconductor's NSDU06 and is RoHS compliant with optional tin/lead or lead-free plating variants.

Datasheet Summary
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The CEN-U06 is an NPN silicon power transistor designed for general purpose audio amplifier applications, housed in a TO-202 case. It has a collector-emitter voltage rating of 80 V, a collector-base voltage rating of 80 V, an emitter-base voltage rating of 4.0 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W at TC=25°C. The device operates with a junction temperature range of -65 to +150°C, has a thermal resistance of 12.5 °C/W from junction to case, and a collector-emitter saturation voltage of 0.35 V at IC=250mA and IB=25mA. It meets the electrical equivalence of National Semiconductor's NSDU06 and is RoHS compliant with optional tin/lead or lead-free plating variants.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CEN-U06
Bipolar Transistors - BJT CEN-U06
Bipolar Transistors - BJT 80Vbo 80Vceo 4.0Vebo 2.0A 10W

Bipolar Transistors - BJT 80Vbo 80Vceo 4.0Vebo 2.0A 10W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CEN-U06
Product Name Bipolar Transistors - BJT
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