Central Semiconductor Corp. MOSFET CEDM7002AE TR

The CEDM7002AE is an enhanced N-channel ESD-protected MOSFET in the SOT-883L package, designed for load switching and power management in high-speed pulsed applications. It has a 60 V drain-source voltage rating and a continuous drain current of 300 mA with a maximum pulsed current of 800 mA. Power dissipation is rated at 100 mW. The device features ESD protection up to 1800 V, low gate charge, and low on-resistance of 1.0 to 1.8 Ω depending on gate drive voltage. Thermal resistance is 1250 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C.