Central Semiconductor Corp. MOSFET CEDM7001 TR

Description
MOSFET N-Channel MOSFET 20V 100mA
Description
MOSFET N-Channel MOSFET 20V 100mA
Datasheet
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The CEDM7001 is an N-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications in load switching, DC-DC conversion, and battery-powered portable equipment. It is housed in a SOT-883L surface mount package measuring 1.05 mm in length, 0.65 mm in width, and 0.40 mm in height, with a low 100 mW power dissipation rating. The device has a drain-source voltage rating of 20 V, a continuous drain current of 100 mA, and a low threshold voltage ranging from 0.6 V to 0.9 V. It features low on-resistance of 0.9 Ω to 3.0 Ω at VGS=4.0 V and is logic level compatible. The part is RoHS compliant and operates over a junction temperature range of -65°C to +150°C.

Datasheet Summary
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The CEDM7001 is an N-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications in load switching, DC-DC conversion, and battery-powered portable equipment. It is housed in a SOT-883L surface mount package measuring 1.05 mm in length, 0.65 mm in width, and 0.40 mm in height, with a low 100 mW power dissipation rating. The device has a drain-source voltage rating of 20 V, a continuous drain current of 100 mA, and a low threshold voltage ranging from 0.6 V to 0.9 V. It features low on-resistance of 0.9 Ω to 3.0 Ω at VGS=4.0 V and is logic level compatible. The part is RoHS compliant and operates over a junction temperature range of -65°C to +150°C.

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Sheung Wan, Hong Kong
MOSFET N-Channel MOSFET 20V 100mA

MOSFET N-Channel MOSFET 20V 100mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CEDM7001 TR
Product Name MOSFET
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