Central Semiconductor Corp. Single FETs, MOSFETs CDMSJ22013.8-650 SL

The CDMSJ22013.8-650 is an N-channel super junction MOSFET in a TO-220FP package, rated for 650 V drain-source voltage and 13.8 A continuous drain current at 25°C. It features a typical on-resistance of 280 mΩ at 10 V gate drive, a low gate charge of 6 nC for the gate-source, and a power dissipation of 35.7 W. The device is designed for high-voltage switching applications such as power factor correction and adapters, with an operating junction temperature range of -55°C to +150°C.