Central Semiconductor Corp. MOSFET CDM4-650 TR13

The CDM4-650 is a 650 V N-channel MOSFET in a DPAK package, designed for high-voltage, fast-switching applications such as PFC and inverters. It has a continuous drain current of 4.0 A, a low on-resistance of 2.44 Ω at VGS=10 V, and a gate charge of 3.0 nC. The device supports a maximum pulsed drain current of 16 A and single-pulse avalanche energy of 202 mJ. Operating junction temperature ranges from -55 °C to +150 °C. Thermal resistance is 1.62 °C/W from junction to case and 110 °C/W from junction to ambient. The gate-source voltage rating is 30 V. The package is leaded surface mount with pins 1, 2, 3, and 4 configured as gate, drain, source, and drain (with drain connected to the tab).