Central Semiconductor Corp. MOSFET CDM2206-800LR SL

Description
MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm
Description
MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm
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The CDM2206-800LR is an 800V N-channel MOSFET in a TO-220 package designed for high-voltage switching applications such as power factor correction and lighting inverters. It features a typical on-resistance of 0.8 Ω at 10 V gate drive, a gate charge of 2.8 nC, and a continuous drain current rating of 6.0 A at 25°C case temperature. The device supports a maximum pulsed drain current of 24 A and has a single-pulse avalanche energy rating of 250 mJ. The thermal resistance from junction to case is 1.14 °C/W. The package has a drain tab electrically connected to the drain pin, and the device operates over a junction temperature range of -55°C to +150°C.

Datasheet Summary
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The CDM2206-800LR is an 800V N-channel MOSFET in a TO-220 package designed for high-voltage switching applications such as power factor correction and lighting inverters. It features a typical on-resistance of 0.8 Ω at 10 V gate drive, a gate charge of 2.8 nC, and a continuous drain current rating of 6.0 A at 25°C case temperature. The device supports a maximum pulsed drain current of 24 A and has a single-pulse avalanche energy rating of 250 mJ. The thermal resistance from junction to case is 1.14 °C/W. The package has a drain tab electrically connected to the drain pin, and the device operates over a junction temperature range of -55°C to +150°C.

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MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm

MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM2206-800LR SL
Product Name MOSFET
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