Central Semiconductor Corp. MOSFET CDM2205-800FP

Description
MOSFET 800Vds 30Vgs 5.0A 20A Idm 48W 17.nC
Description
MOSFET 800Vds 30Vgs 5.0A 20A Idm 48W 17.nC
Datasheet
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The CDM2205-800FP is an 800 V N-channel power MOSFET in a TO-220FP package, designed for high-voltage switching applications such as power factor correction and lighting inverters. It has a continuous drain current rating of 5.0 A, a maximum pulsed drain current of 20 A, and a power dissipation of 48 W. The device features a typical on-resistance of 2.2 Ω at 10 V gate drive, a total gate charge of 17.4 nC, and a single pulse avalanche energy rating of 323 mJ. Its gate-source voltage is rated to 30 V, and it operates with a junction temperature range of -55 °C to +150 °C. Thermal resistance from junction to case is 2.6 °C/W, and from junction to ambient is 120 °C/W.

Datasheet Summary
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The CDM2205-800FP is an 800 V N-channel power MOSFET in a TO-220FP package, designed for high-voltage switching applications such as power factor correction and lighting inverters. It has a continuous drain current rating of 5.0 A, a maximum pulsed drain current of 20 A, and a power dissipation of 48 W. The device features a typical on-resistance of 2.2 Ω at 10 V gate drive, a total gate charge of 17.4 nC, and a single pulse avalanche energy rating of 323 mJ. Its gate-source voltage is rated to 30 V, and it operates with a junction temperature range of -55 °C to +150 °C. Thermal resistance from junction to case is 2.6 °C/W, and from junction to ambient is 120 °C/W.

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Sheung Wan, Hong Kong
MOSFET 800Vds 30Vgs 5.0A 20A Idm 48W 17.nC

MOSFET 800Vds 30Vgs 5.0A 20A Idm 48W 17.nC

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM2205-800FP
Product Name MOSFET
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