Central Semiconductor Corp. MOSFET CDM22012-800LRFP

Description
MOSFET 800V N-Ch LR FET 12A 30Vgs 12A 7.6nC
Description
MOSFET 800V N-Ch LR FET 12A 30Vgs 12A 7.6nC
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The CDM22012-800LRFP is an N-channel MOSFET in a TO-220FP package designed for high-voltage applications such as Power Factor Correction and lighting inverters. It has a drain-source voltage rating of 800 V, a continuous drain current of 12 A, and an ultra-low on-resistance of 0.37 Ω typical at 10 V gate drive. The gate charge is 7.6 nC typical, and the device supports a single pulse avalanche energy of 702 mJ. The thermal resistance from junction to case is 3.13 °C/W, and the operating junction temperature ranges from -55 °C to +150 °C. The marking code is CDM12-800LR.

Datasheet Summary
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The CDM22012-800LRFP is an N-channel MOSFET in a TO-220FP package designed for high-voltage applications such as Power Factor Correction and lighting inverters. It has a drain-source voltage rating of 800 V, a continuous drain current of 12 A, and an ultra-low on-resistance of 0.37 Ω typical at 10 V gate drive. The gate charge is 7.6 nC typical, and the device supports a single pulse avalanche energy of 702 mJ. The thermal resistance from junction to case is 3.13 °C/W, and the operating junction temperature ranges from -55 °C to +150 °C. The marking code is CDM12-800LR.

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MOSFET 800V N-Ch LR FET 12A 30Vgs 12A 7.6nC

MOSFET 800V N-Ch LR FET 12A 30Vgs 12A 7.6nC

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM22012-800LRFP
Product Name MOSFET
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