Central Semiconductor Corp. MOSFET CDM22011-600LRFP

Description
MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm
Description
MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm
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The CDM22011-600LRFP is an N-channel MOSFET designed for high-voltage, fast-switching applications such as power factor correction and lighting inverters. It is packaged in a TO-220FP case and rated for a drain-source voltage of 600 V, a continuous drain current of 11 A, and a maximum power dissipation of 25 W. It features an ultra-low on-resistance of 0.3 Ω (typical) at 10 V gate drive, a low gate charge of 4.45 nC (typical), and a single-pulse avalanche energy rating of 280 mJ. The device operates within a junction temperature range of -55 to +150 °C and has a thermal resistance of 5.0 °C/W from junction to case. It meets RoHS compliance for lead-free assembly.

Datasheet Summary
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The CDM22011-600LRFP is an N-channel MOSFET designed for high-voltage, fast-switching applications such as power factor correction and lighting inverters. It is packaged in a TO-220FP case and rated for a drain-source voltage of 600 V, a continuous drain current of 11 A, and a maximum power dissipation of 25 W. It features an ultra-low on-resistance of 0.3 Ω (typical) at 10 V gate drive, a low gate charge of 4.45 nC (typical), and a single-pulse avalanche energy rating of 280 mJ. The device operates within a junction temperature range of -55 to +150 °C and has a thermal resistance of 5.0 °C/W from junction to case. It meets RoHS compliance for lead-free assembly.

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MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm

MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CDM22011-600LRFP
Product Name MOSFET
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