Central Semiconductor Corp. MOSFET CDM22010-650

The CDM22010-650 is an N-channel power MOSFET designed for high-voltage, fast-switching applications such as power factor correction and inverters. It is packaged in a TO-220 case with a drain-source voltage rating of 650 V, a continuous drain current of 10 A, and a low on-resistance of 0.88 Ω at 10 V gate drive. The gate charge is 8.0 nC, and the device supports a maximum pulsed drain current of 40 A. It has a single pulse avalanche energy rating of 608 mJ, a thermal resistance of 0.8 °C/W from junction to case, and operates from -55 °C to +150 °C. The part meets AEC-Q200 qualification.