Central Semiconductor Corp. Bipolar Transistors - BJT CBCX69 TR TIN/LEAD

The CBCX69 series is a complementary PNP silicon small signal transistor in an SOT-89 surface mount package, designed for high current applications. It has a collector-emitter voltage rating of 20 V, emitter-base voltage of 5.0 V, continuous collector current of 1.0 A, peak collector current of 2.0 A, and power dissipation of 1.2 W. The junction temperature range is -65°C to +150°C with a thermal resistance of 104°C/W. The current gain (hFE) at VCE=1.0V and IC=500mA ranges from 85 to 375, and the transition frequency (fT) is 65 MHz. The device is marked with the full part number and meets RoHS compliance as indicated by the TIN/LEAD suffix option.