Central Semiconductor Corp. Bipolar Transistors - BJT BUX11

Description
Bipolar Transistors - BJT 20A 150W 250Vcbo 200Vceo 12A 8.0Mhz
Description
Bipolar Transistors - BJT 20A 150W 250Vcbo 200Vceo 12A 8.0Mhz
Datasheet
Datasheet Summary
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The BUX11 is a silicon NPN bipolar transistor in a TO-3 package, rated for a continuous collector current of 20 A and a power dissipation of 150 W. It has a collector-base voltage rating of 250 V and a collector-emitter voltage rating of 200 V. The DC current gain (hFE) ranges from 20 to 60 at a collector current of 6.0 A and a collector-emitter voltage of 1.5 V. The saturation voltage is 1.2 V at a collector current of 3.0 A. The transition frequency is 8.0 MHz. The part is designed for high-power switching and amplifier applications.

Datasheet Summary
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The BUX11 is a silicon NPN bipolar transistor in a TO-3 package, rated for a continuous collector current of 20 A and a power dissipation of 150 W. It has a collector-base voltage rating of 250 V and a collector-emitter voltage rating of 200 V. The DC current gain (hFE) ranges from 20 to 60 at a collector current of 6.0 A and a collector-emitter voltage of 1.5 V. The saturation voltage is 1.2 V at a collector current of 3.0 A. The transition frequency is 8.0 MHz. The part is designed for high-power switching and amplifier applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BUX11
Bipolar Transistors - BJT BUX11
Bipolar Transistors - BJT 20A 150W 250Vcbo 200Vceo 12A 8.0Mhz

Bipolar Transistors - BJT 20A 150W 250Vcbo 200Vceo 12A 8.0Mhz

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BUX11
Product Name Bipolar Transistors - BJT
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