Central Semiconductor Corp. Bipolar Transistors - BJT BSY79

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Bipolar Transistors - BJT NPN AMPL/SWITCH 120Vcbo 5.0Vebo
Description
Bipolar Transistors - BJT NPN AMPL/SWITCH 120Vcbo 5.0Vebo
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BSY79 is an NPN bipolar junction transistor for amplification and switching, housed in a TO-18 case. It has a collector-base voltage rating of 120 V, a collector-emitter voltage rating of 50 V, and an emitter-base voltage rating of 5.0 V. It supports a collector current of 1.0 A with a maximum saturation voltage of 0.5 V at 10 mA collector current. The transistor has a transition frequency of 50 MHz, a collector-emitter leakage current of 5.0 μA at VCB = 1.0 V, and a current gain (hFE) ranging from 90 to 30 at 10 mA and 1.0 V. It features a collector-base capacitance of 2.0 pF and an associated noise figure of 4.0 dB under specified conditions.

Datasheet Summary
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BSY79 is an NPN bipolar junction transistor for amplification and switching, housed in a TO-18 case. It has a collector-base voltage rating of 120 V, a collector-emitter voltage rating of 50 V, and an emitter-base voltage rating of 5.0 V. It supports a collector current of 1.0 A with a maximum saturation voltage of 0.5 V at 10 mA collector current. The transistor has a transition frequency of 50 MHz, a collector-emitter leakage current of 5.0 μA at VCB = 1.0 V, and a current gain (hFE) ranging from 90 to 30 at 10 mA and 1.0 V. It features a collector-base capacitance of 2.0 pF and an associated noise figure of 4.0 dB under specified conditions.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BSY79
Bipolar Transistors - BJT BSY79
Bipolar Transistors - BJT NPN AMPL/SWITCH 120Vcbo 5.0Vebo

Bipolar Transistors - BJT NPN AMPL/SWITCH 120Vcbo 5.0Vebo

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BSY79
Product Name Bipolar Transistors - BJT
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