Central Semiconductor Corp. Bipolar Transistors - BJT BSX64

Description
Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 5.0Vebo 30MHz 70pF
Description
Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 5.0Vebo 30MHz 70pF
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NPN bipolar transistor for high current applications with a collector-base voltage of 100 V, collector-emitter voltage of 80 V, emitter-base voltage of 5.0 V, collector current of 1.0 A, saturation voltage of 0.80 V at 1.0 A, current gain of 160 minimum at 1.0 A, transition frequency of 300 MHz, collector output capacitance of 300 pF, and turn-on and turn-off times of 70 ns and 300 ns respectively. Housed in a TO-39 package.

Datasheet Summary
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NPN bipolar transistor for high current applications with a collector-base voltage of 100 V, collector-emitter voltage of 80 V, emitter-base voltage of 5.0 V, collector current of 1.0 A, saturation voltage of 0.80 V at 1.0 A, current gain of 160 minimum at 1.0 A, transition frequency of 300 MHz, collector output capacitance of 300 pF, and turn-on and turn-off times of 70 ns and 300 ns respectively. Housed in a TO-39 package.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BSX64
Bipolar Transistors - BJT BSX64
Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 5.0Vebo 30MHz 70pF

Bipolar Transistors - BJT NPN 100Vcbo 80Vceo 5.0Vebo 30MHz 70pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BSX64
Product Name Bipolar Transistors - BJT
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