Central Semiconductor Corp. TRANSISTORS - RF Transistors (BJT) - BFY90 BFY90

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 049522-BFY90 Packaging: Bulk Mounting: Through Hole Gain: 23dB Frequency - Transition: 1.4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 5.5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 20 @ 25mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
  • TRANSISTORS - RF Transistors (BJT) - BFY90 - 049522-BFY90 - Win Source Electronics
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 049522-BFY90 Packaging: Bulk Mounting: Through Hole Gain: 23dB Frequency - Transition: 1.4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 5.5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 20 @ 25mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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TRANSISTORS - RF Transistors (BJT) - BFY90 - 049522-BFY90 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFY90
049522-BFY90
TRANSISTORS - RF Transistors (BJT) - BFY90 049522-BFY90
Manufacturer: Central Semiconductor Corp Win Source Part Number: 049522-BFY90 Packaging: Bulk Mounting: Through Hole Gain: 23dB Frequency - Transition: 1.4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 5.5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-72 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 20 @ 25mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 049522-BFY90
Packaging: Bulk
Mounting: Through Hole
Gain: 23dB
Frequency - Transition: 1.4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-72
Maximum Current Collector: 25mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 20 @ 25mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BFY90
Bipolar Transistors - BJT BFY90
Bipolar Transistors - BJT . .

Bipolar Transistors - BJT . .

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 049522-BFY90 BFY90
Product Name TRANSISTORS - RF Transistors (BJT) - BFY90 Bipolar Transistors - BJT
Polarity NPN; NPN
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