Central Semiconductor Corp. Bipolar RF Transistors BFY90 TIN/LEAD

The BFY90 is an NPN silicon RF transistor designed for VHF/UHF amplifier, oscillator, and converter applications, housed in a TO-72 case. It has a collector-emitter voltage rating of 15 V, a continuous collector current of 25 mA, and a power dissipation of 200 mW at 25°C. The transistor offers a transition frequency of up to 1.4 GHz at 25 mA and 5 V collector-emitter bias, with collector-base capacitance up to 1.5 pF. The operating and storage junction temperature ranges from -65°C to +200°C. The device meets RoHS compliance when ordered with the PBFREE suffix; the TIN/LEAD variant indicates a proprietary plating option not detailed in the electrical specifications.