Central Semiconductor Corp. Bipolar Transistors - BJT BCY79-X

The BCY79-X is a silicon PNP epitaxial planar transistor in a TO-18 hermetically sealed metal case, designed for low noise amplifier and switching applications. It has a collector-base voltage rating of 45 V, a collector-emitter voltage of 45 V, and an emitter-base voltage of 5.0 V. The device supports a continuous collector current of 100 mA and a power dissipation of 340 mW at 25°C, with a peak collector current of 200 mA. Current gain (hFE) ranges from 380 to 630 at VCE=5.0 V and IC=2.0 mA, and from 240 to 1000 at VCE=1.0 V and IC=10 mA. The transition frequency is 100 MHz, and the collector-output capacitance is 7.0 pF. Operating and storage junction temperatures range from -65°C to +200°C.