Central Semiconductor Corp. Bipolar Transistors - BJT BCY78-X

The BCY78-X is a silicon PNP epitaxial planar transistor in a TO-18 hermetically sealed metal case, designed for low noise amplifier and switching applications. It has a collector-base voltage rating of 32 V, a collector-emitter voltage of 32 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 100 mA. The power dissipation is 340 mW at 25°C ambient temperature and 1.0 W at 25°C case temperature. The junction and storage temperature range is -65 to +200°C. The thermal resistance from junction to ambient is 450 °C/W. Current gain (hFE) ranges from 380 to 630 at VCE=1.0V and IC=2.0mA, and from 240 to 1000 at VCE=1.0V and IC=10mA. The transition frequency is 100 MHz at IC=10mA. Collector-base capacitance is 7.0 pF and base-emitter capacitance is 15 pF at 1 MHz.