Central Semiconductor Corp. Bipolar Transistors - BJT BCY78-IX

The BCY78-IX is a silicon PNP epitaxial planar transistor in a TO-18 hermetically sealed metal case, designed for low noise amplifier and switching applications. It has a collector-base voltage rating of 32 V, a collector-emitter voltage rating of 32 V, and an emitter-base voltage rating of 5.0 V. The device supports a continuous collector current of 100 mA and a power dissipation of 340 mW at 25°C, with a peak collector current of 200 mA. Its hFE ranges from 250 to 460 at VCE=5.0 V and IC=2.0 mA, and from 160 to 630 at VCE=1.0 V and IC=10 mA. The transition frequency is 100 MHz, and the thermal resistance from junction to ambient is 450 °C/W. The operating and storage junction temperature range is -65 °C to +200 °C.