Central Semiconductor Corp. Bipolar Transistors - BJT BCY59

The BCY59 is an NPN silicon epitaxial planar transistor in a TO-18 hermetically sealed metal case, designed for low noise amplification and switching applications. It has a collector-base voltage rating of 45 V, a collector-emitter voltage of 45 V, an emitter-base voltage of 7.0 V, a continuous collector current of 100 mA, and a power dissipation of 340 mW at 25°C. The thermal resistance from junction to ambient is 450 °C/W. Current gain (hFE) ranges from 180 to 630 at VCE=5.0V and IC=2.0mA, and from 240 to 1000 at VCE=1.0V and IC=10mA. The transition frequency is 150 MHz at IC=10mA and VCE=5.0V. Collector-emitter saturation voltage is 0.70 V at IC=100mA and IB=2.5mA. The device operates from -65°C to +200°C.