Central Semiconductor Corp. Bipolar Transistors - BJT BCY59-VIII

The BCY59-VIII is an NPN silicon epitaxial planar transistor in a TO-18 hermetically sealed metal case, designed for low noise amplification and switching applications. It has a collector-base voltage rating of 45 V, a collector-emitter voltage of 45 V, and an emitter-base voltage of 7.0 V. The continuous collector current is 100 mA, with a peak collector current of 200 mA, and power dissipation is 340 mW at 25°C ambient or 1.0 W at 25°C case temperature. The transition frequency is 150 MHz, with a collector-emitter saturation voltage of 0.70 V at 100 mA collector current. Current gain (hFE) ranges from 180 to 310 at 2.0 mA collector current and 120 to 400 at 10 mA collector current. Thermal resistance is 450 °C/W junction-to-ambient and 150 °C/W junction-to-case. Operating and storage junction temperatures range from -65°C to +200°C.