Central Semiconductor Corp. Bipolar Transistors - BJT BCY59-VII

The BCY59-VII is an NPN silicon epitaxial planar transistor in a TO-18 metal case, designed for low-noise amplification and switching. It has a collector-base voltage rating of 45 V, collector-emitter voltage of 45 V, emitter-base voltage of 7.0 V, and continuous collector current of 100 mA. Power dissipation is 340 mW at 25°C ambient, rising to 1.0 W with case temperature held at 25°C. Operating and storage junction temperatures range from -65°C to +200°C. Minor current gains (hFE) range from 180 to 310 at IC=2.0mA and VCE=5.0V, and from 240 to 1000 at IC=10mA and VCE=1.0V. Transition frequency is 150 MHz at IC=10mA and VCE=5.0V. Collector-emitter saturation voltage is 0.70 V at IC=100mA and IB=2.5mA.